MT58L64L36D Description
The Micron® SyncBurst™ SRAM family employs high- speed, low-power CMOS designs that are fabricated using an advanced CMOS process. Micron’s 2Mb SyncBurst SRAMs integrate a 128K x 18, 64K x 32, or 64K x 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counter. All synchronous inputs pass through registers 2Mb:.
MT58L64L36D Key Features
- Fast clock and OE# access times
- Single +3.3V +0.3V/-0.165V power supply (VDD)
- Separate +3.3V isolated output buffer supply (VDDQ)
- SNOOZE MODE for reduced-power standby
- mon data inputs and data outputs
- Individual BYTE WRITE control and GLOBAL WRITE
- Three chip enables for simple depth expansion and address pipelining
- Clock-controlled and registered addresses, data I/Os and control signals
- Internally self-timed WRITE cycle
- Burst control pin (interleaved or linear burst)