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EDBA164B2PR - LPDDR2 SDRAM

Download the EDBA164B2PR datasheet PDF. This datasheet also covers the EDB8164B4PR variant, as both devices belong to the same lpddr2 sdram family and are provided as variant models within a single manufacturer datasheet.

Features

  • LPDDR2 SDRAM EDB8164B4PR, EDB8164B4PK, EDB8164B4PT, EDBA164B2PR Features.
  • Ultra-low-voltage core and I/O power supplies.
  • Frequency range.
  • 533 MHz (data rate: 1066 Mb/s/pin).
  • 4n prefetch DDR architecture.
  • 8 internal banks for concurrent operation.
  • Multiplexed, double data rate, command/address inputs; commands entered on each CK_t/CK_c edge.
  • Bidirectional/differential data strobe per byte of data (DQS_t/DQS_c).
  • Programmable.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (EDB8164B4PR-MicronTechnology.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Micron Technology

Part Number Description
EDBA232B2PB Mobile LPDDR2 SDRAM
EDBA232B2PF Mobile LPDDR2 SDRAM
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EDB4432BBBJ Embedded LPDDR2 SDRAM
EDB4432BBPA Mobile LPDDR2 SDRAM

Full PDF Text Transcription

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216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features LPDDR2 SDRAM EDB8164B4PR, EDB8164B4PK, EDB8164B4PT, EDBA164B2PR Features • Ultra-low-voltage core and I/O power supplies • Frequency range – 533 MHz (data rate: 1066 Mb/s/pin) • 4n prefetch DDR architecture • 8 internal banks for concurrent operation • Multiplexed, double data rate, command/address inputs; commands entered on each CK_t/CK_c edge • Bidirectional/differential data strobe per byte of data (DQS_t/DQS_c) • Programmable READ and WRITE latencies (RL/WL) • Burst length: 4, 8, and 16 • Per-bank refresh for concurrent operation • Auto temperature-compensated self refresh (ATCSR) by built-in temperature sensor • Partial-array self refresh (PASR) • Deep power-down mode (DPD) • Selectable output drive strength (DS) • Clock-sto
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