MT16VDDF12864H Datasheet PDF (SMALL-OUTLINE DDR SDRAM DIMM) | Download Micron Technology MT16VDDF12864H

MT16VDDF12864H - SMALL-OUTLINE DDR SDRAM DIMM

Description

SYMBOL WE#, CAS#,RAS# CK0, CK0# CK1, CK1# TYPE Input Input DESCRIPTION Command Inputs: RAS#, CAS#, and WE# (along with S#) define the command being entered.

Clock: CK, CK# are differential clock inputs.

Features

200-pin, small-outline, dual in-line memory module (SODIMM).
Fast data transfer rates: PC1600, PC2100, and PC2700 www. DataSheet4U. com.
Utilizes 200 MT/s, 266 MT/s, or 333 MT/s DDR SDRAM components.
512MB (64 Meg x 64), 1GB (128 Meg x 64).
VDD = VDDQ = +2.5V.
VDDSPD = +2.3V to +3.6V.
2.5V I/O (SSTL_2 compatible).
Commands entered on each positive CK edge.
DQS edge-aligned with data for READs; centeraligned with data.

Datasheet Details

Part number	MT16VDDF12864H
Manufacturer	Micron Technology
File Size	608.41 KB
Description	SMALL-OUTLINE DDR SDRAM DIMM
Datasheet	MT16VDDF12864H Datasheet
Additional preview pages of the MT16VDDF12864H datasheet.

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Full PDF Text Transcription

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512MB, 1GB (x64) 200-PIN DDR SODIMM SMALL-OUTLINE DDR SDRAM DIMM Features • 200-pin, small-outline, dual in-line memory module (SODIMM) • Fast data transfer rates: PC1600, PC2100, and PC2700 www.DataSheet4U.com • Utilizes 200 MT/s, 266 MT/s, or 333 MT/s DDR SDRAM components • 512MB (64 Meg x 64), 1GB (128 Meg x 64) • VDD = VDDQ = +2.5V • VDDSPD = +2.3V to +3.6V • 2.5V I/O (SSTL_2 compatible) • Commands entered on each positive CK edge • DQS edge-aligned with data for READs; centeraligned with data for WRITEs • Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle • Bidirectional data strobe (DQS) transmitted/ received with data—i.e.

Published: May 26, 2008 |