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MT2854M16B1LL - FLASH MEMORY

General Description

to be accessed.

The address bits registered coincident This 64Mb SyncFlash® data sheet is divided into with the READ command are used to select the starting two major sections.

The SDRAM Interface Functional column location for the burst access.

Key Features

  • MT28S4M16B1LL.
  • 1 Meg x 16 x 4 banks MT28S2M32B1LL.
  • 512K x 32 x 4 banks.
  • 125 MHz SDRAM-compatible read timing.
  • Fully synchronous; all signals registered on positive edge of system clock.
  • Internal pipelined operation; column address can be changed every clock cycle.
  • Internal banks for hiding row access.
  • Programmable burst lengths: 1, 2 , 4, 8, or full page (read) 1, 2, 4, or 8 (write).
  • LVTTL-compatible inputs and outputs.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com ADVANCE‡ 64Mb: x16, x32 SYNCFLASH MEMORY SYNCFLASH® MEMORY FEATURES MT28S4M16B1LL – 1 Meg x 16 x 4 banks MT28S2M32B1LL – 512K x 32 x 4 banks • 125 MHz SDRAM-compatible read timing • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access • Programmable burst lengths: 1, 2 , 4, 8, or full page (read) 1, 2, 4, or 8 (write) • LVTTL-compatible inputs and outputs • 3.0V–3.6V VCC, 1.65V–1.