MT28C6428P20 Overview
ADVANCE‡ 4 MEG x 16 ASYNCHRONOUS/PAGE FLASH 512K x 16 SRAM BO MEMORY FLASH AND SRAM BO MEMORY.
MT28C6428P20 Key Features
- Flexible dual-bank architecture
- Support for true concurrent operations with no latency: .. Read bank b during program bank a and vice versa Read bank b
- Organization: 4,096K x 16 (Flash) 512K x 16 (SRAM)
- Basic configuration: Flash Bank a (16Mb Flash for data storage)
- Eight 4K-word parameter blocks
- Thirty-one 32K-word blocks Bank b (48Mb Flash for program storage)
- Ninety-six 32K-word main blocks SRAM 8Mb SRAM for data storage
- 512K-words
- Asynchronous access time Flash access time: 80ns @ 1.80V F_VCC SRAM access time: 80ns @ 1.80V S_VCC
- Page Mode read access Interpage read access: 80ns @ 1.80V F_VCC Intrapage read access: 30ns @ 1.80V F_VCC