MT28F200B5 Description
Writing or erasing the device is done 60ns access -6 with a 5V VPP voltage, while all operations are per80ns access -8 formed with a 5V VCC. Due to process technology 80ns access -8 ET advances, 5V VPP is optimal for application and produc Configurations tion programming. These devices are fabricated Top (1FFFFH) T with Micron’s advanced CMOS floating-gate process.