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MT28F322D20 - FLASH MEMORY

Download the MT28F322D20 datasheet PDF. This datasheet also covers the MT28F322D18 variant, as both devices belong to the same flash memory family and are provided as variant models within a single manufacturer datasheet.

Description

Table.

See page 43 for mechanical drawing.

Timing 70ns access 80ns access Frequency 54 MHz 40 MHz No burst operation Boot Block Configuration Top Bottom Package 58-ball FBGA (8 x 7 ball grid) Operating Temperature Range Extended (-40ºC to +8

Features

  • Flexible dual-bank architecture.
  • Support for true concurrent operation with zero latency.
  • Read bank a during program bank b and vice versa.
  • Read bank a during erase bank b and vice versa.
  • Basic configuration: Seventy-one erasable blocks.
  • Bank a (8Mb for data storage).
  • Bank b (24Mb for program storage).
  • VCC, VCCQ, VPP voltages.
  • 1.70V (MIN), 1.90V (MAX) VCC, VCCQ (MT28F322D18 only).
  • 1.80V VCC, VCCQ (MIN); 2.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT28F322D18_MicronTechnology.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Micron Technology

Part Number Description
MT28F322D18 FLASH MEMORY
MT28F322P3 FLASH MEMORY
MT28F320A18 FLASH MEMORY
MT28F320J3 Q-FLASH MEMORY
MT28F002B3 FLASH MEMORY

Full PDF Text Transcription

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www.DataSheet4U.com 2 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F322D20 MT28F322D18 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES • Flexible dual-bank architecture – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa – Read bank a during erase bank b and vice versa • Basic configuration: Seventy-one erasable blocks – Bank a (8Mb for data storage) – Bank b (24Mb for program storage) • VCC, VCCQ, VPP voltages – 1.70V (MIN), 1.90V (MAX) VCC, VCCQ (MT28F322D18 only) – 1.80V VCC, VCCQ (MIN); 2.20V VCC (MAX)and 2.25V VCCQ (MAX) (MT28F322D20 only) – 0.9V (TYP) VPP (in-system PROGRAM/ERASE) – 12V ±5% (HV) VPP tolerant (factory programming compatibility) • Random access time: 70ns/80ns @ 1.
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