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MT28F640J3 - Q-FLASH MEMORY

Download the MT28F640J3 datasheet PDF. This datasheet also covers the MT28F128J3 variant, as both devices belong to the same q-flash memory family and are provided as variant models within a single manufacturer datasheet.

Description

The MT28F128J3 is a nonvolatile, electrically blockcan provide data protection when connected to ground.

erasable (Flash), programmable memory containing This pin also enables program or erase lockout during 134,217,728 bits organized as 16,777,218 bytes (8 bits) power transition.

Features

  • MT28F128J3‡, MT28F640J3, MT28F320J3‡.
  • x8/x16 organization.
  • One hundred twenty-eight 128KB erase blocks (128Mb) Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb).
  • VCC, VCCQ, and VPEN voltages: 2.7V to 3.6V VCC operation 2.7V to 3.6V or 4.5V to 5.5V.
  • VCCQ operation 2.7V to 3.6V, or 5V VPEN.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT28F128J3_MicronTechnology.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Q-FLASHTM MEMORY FEATURES MT28F128J3‡, MT28F640J3, MT28F320J3‡ • x8/x16 organization • One hundred twenty-eight 128KB erase blocks (128Mb) Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb) • VCC, VCCQ, and VPEN voltages: 2.7V to 3.6V VCC operation 2.7V to 3.6V or 4.5V to 5.5V* VCCQ operation 2.7V to 3.6V, or 5V VPEN application programming • Interface Asynchronous Page Mode Reads: 150ns/25ns read access time (128Mb) 120ns/25ns read access time (64Mb) 110ns/25ns read access time (32Mb) • Enhanced data protection feature with VPEN = VSS Flexible sector locking Sector erase/program lockout during power transition • Security OTP block feature DataSheet4U.
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