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MT29F2G08AABWP - 8Gb x8/x16 Multiplexed NAND Flash Memory

Download the MT29F2G08AABWP datasheet PDF. This datasheet also covers the MT29F4G08BABWP variant, as both devices belong to the same 8gb x8/x16 multiplexed nand flash memory family and are provided as variant models within a single manufacturer datasheet.

General Description

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Key Features

  • NAND Flash Memory MT29F2G08AABWP/MT29F2G16AABWP MT29F4G08BABWP/MT29F4G16BABWP MT29F8G08FABWP Features.
  • Organization:.
  • Page size: x8: 2,112 bytes (2,048 + 64 bytes) x16: 1,056 words (1,024 + 32 words).
  • Block size: 64 pages (128K + 4K bytes).
  • Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks; 8Gb: 8,192 blocks.
  • Read performance:.
  • Random read: 25µs.
  • Sequential read: 30ns (3V x8 only).
  • Write performance:.
  • Page program:.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT29F4G08BABWP_MicronTechnology.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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MT29F2G08ABAFAWP NAND Flash Memory Micron

Other Datasheets by Micron Technology

Part Number Description
MT29F2G08AACWP NAND Flash Memory
MT29F2G01AAAED NAND Flash Memory
MT29F2G16AABWP 8Gb x8/x16 Multiplexed NAND Flash Memory
MT29F1G01AAADD 1Gb x1: SPI NAND Flash Memory
MT29F1G08AACH4 NAND Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory Features NAND Flash Memory MT29F2G08AABWP/MT29F2G16AABWP MT29F4G08BABWP/MT29F4G16BABWP MT29F8G08FABWP Features • Organization: • Page size: x8: 2,112 bytes (2,048 + 64 bytes) x16: 1,056 words (1,024 + 32 words) • Block size: 64 pages (128K + 4K bytes) • Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks; 8Gb: 8,192 blocks • Read performance: • Random read: 25µs • Sequential read: 30ns (3V x8 only) • Write performance: • Page program: 300µs (TYP) • Block erase: 2ms (TYP) • Endurance: 100,000 PROGRAM/ERASE cycles • Data retention: 10 years • First block (block address 00h) guaranteed to be valid without ECC (up to 1,000 PROGRAM/ERASE cycles) • VCC: 2.7V–3.