MT41K128M16 - 1.35V DDR3L SDRAM

Product Overview

Micron Technology

Part number	MT41K128M16
Manufacturer	Micron Technology
File Size	3.34 MB
Description	1.35V DDR3L SDRAM
Datasheet	MT41K128M16 Datasheet
Note	This datasheet PDF includes multiple part numbers: MT41K128M16, MT41K512M4. Please refer to the document for exact specifications by model.
Additional preview pages of the MT41K128M16 datasheet.

DDR3L SDRAM MT41K512M4 64 Meg x 4 x 8 banks MT41K256M8 32 Meg x 8 x 8 banks MT41K128M16

The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device.

VDD = VDDQ = 1.35V (1.283.
1.45V).
Backward-compatible to VDD = VDDQ = 1.5V ±0.075V.
Differential bidirectional data strobe.
8n-bit prefetch architecture.
Differential clock inputs (CK, CK#).
8 internal banks.
Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals.
Programmable CAS (READ) latency (CL).
Programmable posted CAS additive latency (AL).
Programmable CAS (WRITE) l.

📁 Similar Datasheet

Other Datasheets by Micron Technology

Published: Nov 5, 2017 |