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MT41K128M16 - 1.35V DDR3L SDRAM

Download the MT41K128M16 datasheet PDF. This datasheet also covers the MT41K512M4 variant, as both devices belong to the same 1.35v ddr3l sdram family and are provided as variant models within a single manufacturer datasheet.

General Description

DDR3L SDRAM MT41K512M4 64 Meg x 4 x 8 banks MT41K256M8 32 Meg x 8 x 8 banks MT41K128M16

The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device.

Key Features

  • VDD = VDDQ = 1.35V (1.283.
  • 1.45V).
  • Backward-compatible to VDD = VDDQ = 1.5V ±0.075V.
  • Differential bidirectional data strobe.
  • 8n-bit prefetch architecture.
  • Differential clock inputs (CK, CK#).
  • 8 internal banks.
  • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals.
  • Programmable CAS (READ) latency (CL).
  • Programmable posted CAS additive latency (AL).
  • Programmable CAS (WRITE) l.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT41K512M4_MicronTechnology.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Micron Technology

Part Number Description
MT41K128M8 Automotive DDR3L SDRAM
MT41K1G16 1.35V DDR3L SDRAM
MT41K1G4 DDR3L SDRAM
MT41K1G8 TwinDie 1.35V DDR3L SDRAM
MT41K256M16 DDR3L SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2Gb: x4, x8, x16 DDR3L SDRAM Description DDR3L SDRAM MT41K512M4 – 64 Meg x 4 x 8 banks MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks Description The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device. Refer to the DDR3 (1.5V) SDRAM data sheet specifications when running in 1.5V compatible mode. Features • VDD = VDDQ = 1.35V (1.283–1.45V) • Backward-compatible to VDD = VDDQ = 1.5V ±0.