MT41K1G16 Overview
Refer to Micron’s 8Gb DDR3L SDRAM base part number MT41K512M16 (monolithic) data sheet for the specifications not included in this document.
MT41K1G16 Key Features
- Uses two 8Gb x16 Micron die in one package
- Two ranks (includes dual CS#, ODT, CKE, and ZQ
- VDD = VDDQ = 1.35V (1.283-1.425V); backward
- patible to 1.5V operation
- 1.35V center-terminated push/pull I/O
- JEDEC-standard ballout
- Low-profile package
- TC of 0°C to 95°C
- 0°C to 85°C: 8192 refresh cycles in 64ms
- 85°C to 95°C: 8192 refresh cycles in 32ms