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MT41K512M16 - 32 Meg x 16 x 8 Banks 1.35V DDR3L-RS SDRAM

Datasheet Summary

Description

TwinDie™ 1.35V DDR3L-RS SDRAM MT41K512M16

The 8Gb (TwinDie™) 1.35V DDR3L-RS SDRAM is a low-current self refresh version, via a TCSR feature, of the 1.35V DDR3L SDRAM device.

Features

  • Uses two 4Gb x16 Micron die in one package.
  • Two ranks (includes dual CS#, ODT, CKE and ZQ balls).
  • VDD = V DDQ = 1.35V (1.283.
  • 1.425V); backward compatible to 1.5V operation.
  • 1.35V center-terminated push/pull I/O.
  • JEDEC-standard ball-out.
  • Low-profile package.
  • TC of 0°C to 95°C.
  • 0°C to 85°C: 8192 refresh cycles in 64ms.
  • 85°C to 95°C: 8192 refresh cycles in 32ms.
  • Temperature-compensated self refresh (T.

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Datasheet Details

Part number MT41K512M16
Manufacturer Micron Technology
File Size 436.56 KB
Description 32 Meg x 16 x 8 Banks 1.35V DDR3L-RS SDRAM
Datasheet download datasheet MT41K512M16 Datasheet
Additional preview pages of the MT41K512M16 datasheet.

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Full PDF Text Transcription

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8Gb: x16 TwinDie DDR3L-RS SDRAM Description TwinDie™ 1.35V DDR3L-RS SDRAM MT41K512M16 – 32 Meg x 16 x 8 Banks Description The 8Gb (TwinDie™) 1.35V DDR3L-RS SDRAM is a low-current self refresh version, via a TCSR feature, of the 1.35V DDR3L SDRAM device. It uses two Micron 4Gb DDR3L-RS SDRAM x16 die for essentially two ranks of 4Gb DDR3L-RS SDRAM. Unless stated otherwise, the DDR3L-RS meets the functional and timing specifications listed in the equivalent density DDR3L SDRAM data sheets. Refer to Micron’s 4Gb DDR3L SDRAM data sheet for the specifications not included in this document. Specifications for base part number MT41K256M16 (monolithic) correlate to manufacturing part number MT41K512M16.
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