MT41K512M16 Datasheet | Micron Technology

8Gb: x16 Twin Die DDR3L-RS SDRAM Description Twin Die™ 1.35V DDR3L-RS SDRAM - 32 Meg x 16 x 8 Banks Description The 8Gb (Twin Die™) 1.35V DDR3L-RS SDRAM is a low-current self refresh version, via a TCSR feature, of the 1.35V DDR3L SDRAM device. It uses two Micron 4Gb DDR3L-RS SDRAM x16 die for essentially two ranks of 4Gb DDR3L-RS SDRAM. Unless stated otherwise, the DDR3L-RS meets the functional and timing specifications listed in the equivalent density DDR3L SDRAM data sheets. Refer to Micron’s 4Gb DDR3L SDRAM data sheet for the specifications not included in this document. Specifications for base part number MT41K256M16 (monolithic) correlate to manufacturing part number MT41K512M16. Options - Configuration - 32 Meg x 16 x 8 banks x 2 ranks - FBGA package (Pb-free) - 96-ball FBGA (10mm x 14mm x 1.2mm) Rev. E - Timing - cycle time1 - 1.25ns @ CL = 11 (DDR3L-1600) - 1.5ns @ CL = 9 (DDR3L-1333) - 1.87ns @ CL = 7 (DDR3L-1066) - Power saving - TCSR - Operating temperature - mercial (0°C ≤ T C ≤ 95°C) - Industrial (-40°C ≤ T C ≤ 95°C) - Revision Note: 1. CL = CAS (READ) latency. Marking 512M16 TNA -125 -15E -187E M None IT :E Features - Uses two 4Gb x16 Micron die in one package - Two ranks (includes dual CS#, ODT, CKE and ZQ balls) - VDD = V DDQ = 1.35V (1.283- 1.425V); backward patible to 1.5V operation - 1.35V center-terminated push/pull I/O - JEDEC-standard ball-out - Low-profile...