Part MT41K512M16
Description 32 Meg x 16 x 8 Banks 1.35V DDR3L-RS SDRAM
Manufacturer Micron Technology
Size 436.56 KB
Micron Technology

MT41K512M16 Overview

Key Features

  • Uses two 4Gb x16 Micron die in one package
  • Two ranks (includes dual CS#, ODT, CKE and ZQ balls)
  • VDD = V DDQ = 1.35V (1.283–1.425V); backward compatible to 1.5V operation
  • 1.35V center-terminated push/pull I/O
  • JEDEC-standard ball-out
  • Low-profile package
  • TC of 0°C to 95°C – 0°C to 85°C: 8192 refresh cycles in 64ms – 85°C to 95°C: 8192 refresh cycles in 32ms
  • Temperature-compensated self refresh (TCSR) mode
  • Backward compatible to 1066, CL = 7 (-187E)