MT42L64M32D1
Key Features
- Mobile LPDDR2 SDRAM
- Ultra low-voltage core and I/O power supplies – VDD2 = 1.14–1.30V – VDDCA/VDDQ = 1.14–1.30V – VDD1 = 1.70–1.95V
- Clock frequency range – 533–10 MHz (data rate range: 1066–20 Mb/s/pin)
- Four-bit prefetch DDR architecture
- Eight internal banks for concurrent operation
- Multiplexed, double data rate, mand/address inputs; mands entered on every CK edge
- Bidirectional/differential data strobe per byte of data (DQS/DQS#)
- Programmable READ and WRITE latencies (RL/WL)
- Per-bank refresh for concurrent operation
- On-chip temperature sensor to control self refresh rate
