Datasheet4U Logo Datasheet4U.com

MT46H128M16LF - Mobile Low-Power DDR SDRAM

General Description

of signal connections and die configurations for each respective architecture.

Key Features

  • Mobile Low-Power DDR SDRAM MT46H128M16LF.
  • 32 Meg x 16 x 4 Banks MT46H64M32LF.
  • 16 Meg x 32 x 4 Banks MT46H128M32L2.
  • 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4.
  • 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4.
  • 32 Meg x 16 x 4 Banks x 4 Features.
  • VDD/VDDQ = 1.70.
  • 1.95V.
  • Bidirectional data strobe per byte of data (DQS).
  • Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle.
  • Differential.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MT4600 P & N-Channel 100-V(D-S) MOSFET Matrix Microtech
MT4600 Dual N & P-Channel PowerTrench MOSFET MT Semiconductor
MT4601B02-1 LCD Module CSOT
MT4601B02-2 LCD Module CSOT
MT4605 20V Power MOSFET MT Semiconductor

Other Datasheets by Micron Technology

Part Number Description
MT46H128M32L2 Mobile Low-Power DDR SDRAM
MT46H16M16LF Mobile Low-Power DDR SDRAM
MT46H16M32LF Mobile Low-Power DDR SDRAM
MT46H16M32LG Mobile Low-Power DDR SDRAM
MT46H256M32L4 Mobile Low-Power DDR SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 Banks MT46H64M32LF – 16 Meg x 32 x 4 Banks MT46H128M32L2 – 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 – 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 – 32 Meg x 16 x 4 Banks x 4 Features • VDD/VDDQ = 1.70–1.