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MT46H256M32L4 - Mobile Low-Power DDR SDRAM

Download the MT46H256M32L4 datasheet PDF. This datasheet also covers the MT46H128M16LF variant, as both devices belong to the same mobile low-power ddr sdram family and are provided as variant models within a single manufacturer datasheet.

General Description

of signal connections and die configurations for each respective architecture.

Key Features

  • Mobile Low-Power DDR SDRAM MT46H128M16LF.
  • 32 Meg x 16 x 4 Banks MT46H64M32LF.
  • 16 Meg x 32 x 4 Banks MT46H128M32L2.
  • 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4.
  • 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4.
  • 32 Meg x 16 x 4 Banks x 4 Features.
  • VDD/VDDQ = 1.70.
  • 1.95V.
  • Bidirectional data strobe per byte of data (DQS).
  • Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle.
  • Differential.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT46H128M16LF-MicronTechnology.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Micron Technology

Part Number Description
MT46H256M32R4 Mobile Low-Power DDR SDRAM
MT46H128M16LF Mobile Low-Power DDR SDRAM
MT46H128M32L2 Mobile Low-Power DDR SDRAM
MT46H16M16LF Mobile Low-Power DDR SDRAM
MT46H16M32LF Mobile Low-Power DDR SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 Banks MT46H64M32LF – 16 Meg x 32 x 4 Banks MT46H128M32L2 – 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 – 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 – 32 Meg x 16 x 4 Banks x 4 Features • VDD/VDDQ = 1.70–1.