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MT46H4M32LF - Mobile Low-Power DDR SDRAM

Description

8 Functional Block Diagrams 9 Ball Assignments 11 Ball Descriptions 13 Package Dimensions 15 Electrical Specifications 17 Electrical Specifications IDD Parameters 20 Electrical Specifications AC Operating Conditions 24 Output Drive Characteristics 29 Functional Descripti

Features

  • Mobile Low-Power DDR SDRAM MT46H8M16LF.
  • 2 Meg x 16 x 4 Banks MT46H4M32LF.
  • 1 Meg x 32 x 4 Banks Features.
  • VDD/VDDQ = 1.70.
  • 1.95V.
  • Bidirectional data strobe per byte of data (DQS).
  • Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle.
  • Differential clock inputs (CK and CK#).
  • Commands entered on each positive CK edge.
  • DQS edge-aligned with data for READs; centeraligned with data for.

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Full PDF Text Transcription

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128Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 Banks MT46H4M32LF – 1 Meg x 32 x 4 Banks Features • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle • Differential clock inputs (CK and CK#) • Commands entered on each positive CK edge • DQS edge-aligned with data for READs; centeraligned with data for WRITEs • 4 internal banks for concurrent operation • Data masks (DM) for masking write data; one mask per byte • Programmable burst lengths (BL): 2, 4, 8, or 16 • Concurrent auto precharge option is supported • Auto refresh and self refresh modes • 1.
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