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MT46H64M16LF - Mobile Low-Power DDR SDRAM

Download the MT46H64M16LF datasheet PDF. This datasheet also covers the MT46H32M32LG variant, as both devices belong to the same mobile low-power ddr sdram family and are provided as variant models within a single manufacturer datasheet.

Description

8 Functional Block Diagrams 9 Ball Assignments and Descriptions 11 Package Dimensions 16 Electrical Specifications 19 Electrical Specifications IDD Parameters 23 Electrical Specifications AC Operating Conditions 29 Output Drive Characteristics 34 Functional Description 3

Features

  • Mobile Low-Power DDR SDRAM MT46H64M16LF.
  • 16 Meg x 16 x 4 banks MT46H32M32LF.
  • 8 Meg x 32 x 4 banks MT46H32M32LG.
  • 8 Meg x 32 x 4 banks Features.
  • VDD/VDDQ = 1.70.
  • 1.95V.
  • Bidirectional data strobe per byte of data (DQS).
  • Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle.
  • Differential clock inputs (CK and CK#).
  • Commands entered on each positive CK edge.
  • DQS edge-aligned wi.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT46H32M32LG-MicronTechnology.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Micron Technology

Part Number Description
MT46H64M32LF Mobile Low-Power DDR SDRAM
MT46H128M16LF Mobile Low-Power DDR SDRAM
MT46H128M32L2 Mobile Low-Power DDR SDRAM
MT46H16M16LF Mobile Low-Power DDR SDRAM
MT46H16M32LF Mobile Low-Power DDR SDRAM

Full PDF Text Transcription

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1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 banks MT46H32M32LF – 8 Meg x 32 x 4 banks MT46H32M32LG – 8 Meg x 32 x 4 banks Features • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle • Differential clock inputs (CK and CK#) • Commands entered on each positive CK edge • DQS edge-aligned with data for READs; centeraligned with data for WRITEs • 4 internal banks for concurrent operation • Data masks (DM) for masking write data; one mask per byte • Programmable burst lengths (BL): 2, 4, 8, or 16 • Concurrent auto precharge option is supported • Auto refresh and self refresh modes • 1.
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