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MT46H8M32LF - Mobile Low-Power DDR SDRAM

Download the MT46H8M32LF datasheet PDF (MT46H16M16 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for mobile low-power ddr sdram.

Description

of products still under development.

PDF: 09005aef818ff781/Source: 09005aef818ff799 MT46H16M16.fm - Rev.

Micron Technology, Inc., reserves the right to change products or specifications without notice.

Features

  • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V.
  • Bidirectional data strobe per byte of data (DQS).
  • Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle.
  • Differential clock inputs (CK and CK#).
  • Commands entered on each positive CK edge.
  • DQS edge-aligned with data for READs; centeraligned with data for WRITEs.
  • Four internal banks for concurrent operation.
  • Data masks (DM) for masking write data.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT46H16M16_MicronTechnology.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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www.DataSheet4U.com Preview‡ 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile DDR SDRAM Mobile Double Data Rate (DDR) SDRAM MT46H16M16LF – 4 Meg x 16 x 4 Banks MT46H8M32LF – 2 Meg x 32 x 4 Banks For a complete data sheet, please refer to www.micron.com/mobileds. Features • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.
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