MT46V16M8 Datasheet PDF - Micron Technology (MT46Vxxx) DOUBLE DATA RATE DDR SDRAM Specs

MT46V16M8 - (MT46Vxxx) DOUBLE DATA RATE DDR SDRAM

Datasheet Summary

Description

The 128Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits.

It is internally configured as a quad-bank DRAM.

The 128Mb DDR SDRAM uses a double data rate architecture to achieve high-speed operation.

Features

c . U 4 t Double Data Rate (DDR) SDRAM e e8 Meg x 4 x 4 Banks MT46V32M4h.
S.
4 Meg x 8 x 4 Banks MT46V16M8 a MT46V8M16 at.
2 Meg x 16 x 4 Banks . D w w Features Options Marking w For the latest data sheet revisions, please refer to the Micron Web site: www. micron. com/sdram.
VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V.
VDD = +2.6V ±0.1V, VDDQ = +2.6V ±0.1V (DDR 400).
Bidirectional data strobe (DQS) transmitted/ received with data, i. e. , source-synch.

Datasheet Details

Part number	MT46V16M8
Manufacturer	Micron Technology
File Size	7.86 MB
Description	(MT46Vxxx) DOUBLE DATA RATE DDR SDRAM
Datasheet	MT46V16M8 Datasheet
Additional preview pages of the MT46V16M8 datasheet.

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Full PDF Text Transcription

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m 128Mb: x4, x8, x16 DDR SDRAM o Features c . U 4 t Double Data Rate (DDR) SDRAM e e8 Meg x 4 x 4 Banks MT46V32M4h – S – 4 Meg x 8 x 4 Banks MT46V16M8 a MT46V8M16 at – 2 Meg x 16 x 4 Banks .D w w Features Options Marking w For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/sdram • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • VDD = +2.6V ±0.1V, VDDQ = +2.6V ±0.1V (DDR 400) • Bidirectional data strobe (DQS) transmitted/ received with data, i.e.

Published: Feb 9, 2006 |