Datasheet4U Logo Datasheet4U.com

MT46V16M8 - (MT46Vxxx) DOUBLE DATA RATE DDR SDRAM

General Description

The 128Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits.

It is internally configured as a quad-bank DRAM.

The 128Mb DDR SDRAM uses a double data rate architecture to achieve high-speed operation.

Key Features

  • c . U 4 t Double Data Rate (DDR) SDRAM e e8 Meg x 4 x 4 Banks MT46V32M4h.
  • S.
  • 4 Meg x 8 x 4 Banks MT46V16M8 a MT46V8M16 at.
  • 2 Meg x 16 x 4 Banks . D w w Features Options Marking w For the latest data sheet revisions, please refer to the Micron Web site: www. micron. com/sdram.
  • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V.
  • VDD = +2.6V ±0.1V, VDDQ = +2.6V ±0.1V (DDR 400).
  • Bidirectional data strobe (DQS) transmitted/ received with data, i. e. , source-synch.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
m 128Mb: x4, x8, x16 DDR SDRAM o Features c . U 4 t Double Data Rate (DDR) SDRAM e e8 Meg x 4 x 4 Banks MT46V32M4h – S – 4 Meg x 8 x 4 Banks MT46V16M8 a MT46V8M16 at – 2 Meg x 16 x 4 Banks .D w w Features Options Marking w For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/sdram • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • VDD = +2.6V ±0.1V, VDDQ = +2.6V ±0.1V (DDR 400) • Bidirectional data strobe (DQS) transmitted/ received with data, i.e.