MT46V32M16 Datasheet | Micron Technology

512Mb: x4, x8, x16 DDR SDRAM Features Double Data Rate (DDR) SDRAM MT46V128M4 - 32 Meg x 4 x 4 banks MT46V64M8 - 16 Meg x 8 x 4 banks MT46V32M16 - 8 Meg x 16 x 4 banks Features - VDD = VDD 2.5V ±0.2V, VDDQ = = 2.6V ±0.1V, VDDQ 2.5V ±0.2V = 2.6V ±0.1V (DDR400)1 - Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (x16 has two - one per byte) - Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle - Differential clock inputs (CK and CK#) - mands entered on each positive CK edge - DQS edge-aligned with data for READs; center- aligned with data for WRITEs - DLL to align DQ and DQS...