MT48G16M16LF Datasheet PDF - Micron Technology 4M x 16 x 4 Banks MOBILE SDRAM Specs

MT48G16M16LF - 4M x 16 x 4 Banks MOBILE SDRAM

This page provides the datasheet information for the MT48G16M16LF, a member of the MT48LC16M16LF 4M x 16 x 4 Banks MOBILE SDRAM family.

Datasheet Summary

Description

Features

Fully synchronous; all signals registered on positive edge of system clock.
Internal pipelined operation; column address can be changed every clock cycle.
Internal banks for hiding row access/precharge.
Programmable burst lengths: 1, 2, 4, 8, or full page.
Auto Precharge, includes.

Datasheet Details

Part number	MT48G16M16LF
Manufacturer	Micron Technology
File Size	1.76 MB
Description	4M x 16 x 4 Banks MOBILE SDRAM
Datasheet	MT48G16M16LF Datasheet
Additional preview pages of the MT48G16M16LF datasheet.

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Full PDF Text Transcription

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PRELIMINARY‡ 256Mb: x16 MOBILE SDRAM MOBILE SDRAM Features • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/precharge • Programmable burst lengths: 1, 2, 4, 8, or full page • Auto Precharge, includes CONCURRENT AUTO PRECHARGE and Auto Refresh Modes • Self Refresh Mode • 64ms, 8,192-cycle refresh • LVTTL-compatible inputs and outputs • Low voltage power supply • Temperature Compensated Self Refresh (TCSR) Option Marking • VDD/VDDQ LC 3.3V/3.3V G 3.0V/3.0V V 2.5V/2.5V-1.

Published: Apr 8, 2006 |