MT48G8M16LFF4 Datasheet PDF - Micron Technology Synchronous DRAM Specs

MT48G8M16LFF4 - Synchronous DRAM

This page provides the datasheet information for the MT48G8M16LFF4, a member of the MT48LC8M16LFFF Synchronous DRAM family.

Datasheet Summary

Description

Features

Temperature Compensated Self Refresh (TCSR).
Fully synchronous; all signals registered on positive edge of system clock.
Internal pipelined operation; column address can be changed every clock cycle.
Internal banks for hiding row access/precharge.
Programmable burst lengths: 1, 2, 4, 8, or full page.
Auto Precharge, includes.

Datasheet Details

Part number	MT48G8M16LFF4
Manufacturer	Micron Technology
File Size	1.94 MB
Description	Synchronous DRAM
Datasheet	MT48G8M16LFF4 Datasheet
Additional preview pages of the MT48G8M16LFF4 datasheet.

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Full PDF Text Transcription

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128Mb: x16, x32 MOBILE SDRAM SYNCHRONOUS DRAM Features • Temperature Compensated Self Refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/precharge • Programmable burst lengths: 1, 2, 4, 8, or full page • Auto Precharge, includes CONCURRENT auto precharge, and Auto Refresh Modes • Self Refresh Mode; standard and low power • 64ms, 4,096-cycle refresh • LVTTL-compatible inputs and outputs • Low voltage power supply • Partial Array Self Refresh power-saving mode OPTIONS MARKING LC G V MT48G8M16LFFF, MT48G8M16LFF4, MT48LC8M16LFFF, MT48LC8M16LFF4, MT48V8M16LFF4, MT48V8M16LFFF MT48LC4M32LFFC, MT48LC4M32LFF5, MT48V4M32LFFC, MT48V4M32LFF5

Published: Mar 18, 2006 |