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MT48H4M32LF - Mobile Low-Power SDR SDRAM

Description

8 Functional Block Diagram 9 Ball Assignments and Descriptions 10 Package Dimensions 13 Electrical Specifications 15 Absolute Maximum Ratings 15 Electrical Specifications IDD Parameters 17 Electrical Specifications AC Operating Conditions 20 Output Drive Characteristics

Features

  • Mobile Low-Power SDR SDRAM MT48H8M16LF.
  • 2 Meg x 16 x 4 banks MT48H4M32LF.
  • 1 Meg x 32 x 4 banks Features.
  • VDD/VDDQ = 1.7.
  • 1.95V.
  • Fully synchronous; all signals registered on positive edge of system clock.
  • Internal, pipelined operation; column address can be changed every clock cycle.
  • 4 internal banks for concurrent operation.
  • Programmable burst lengths (BL): 1, 2, 4, 8, and continuous.
  • Auto precharge, includes concurr.

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Full PDF Text Transcription

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128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H8M16LF – 2 Meg x 16 x 4 banks MT48H4M32LF – 1 Meg x 32 x 4 banks Features • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive edge of system clock • Internal, pipelined operation; column address can be changed every clock cycle • 4 internal banks for concurrent operation • Programmable burst lengths (BL): 1, 2, 4, 8, and continuous • Auto precharge, includes concurrent auto precharge • Auto refresh and self refresh modes • LVTTL-compatible inputs and outputs • On-chip temperature sensor to control self refresh rate • Partial-array self refresh (PASR) • Deep power-down (DPD) • Selectable output drive strength (DS) • 64ms refresh period Options • VDD/VDDQ: 1.8V/1.
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