MT48H8M32LF Datasheet PDF (Mobile Low-Power SDR SDRAM) | Download Micron Technology MT48H8M32LF

MT48H8M32LF - Mobile Low-Power SDR SDRAM

Description

8 Functional Block Diagram 9 Ball Assignments and Descriptions 10 Package Dimensions 13 Electrical Specifications 15 Absolute Maximum Ratings 15 Electrical Specifications IDD Parameters 17 Electrical Specifications AC Operating Conditions 20 Output Drive Characteristics

Features

Mobile Low-Power SDR SDRAM MT48H16M16LF.
4 Meg x 16 x 4 banks MT48H8M32LF.
2 Meg x 32 x 4 banks Features.
VDD/VDDQ = 1.7.
1.95V.
Fully synchronous; all signals registered on positive edge of system clock.
Internal, pipelined operation; column address can be changed every clock cycle.
Four internal banks for concurrent operation.
Programmable burst lengths: 1, 2, 4, 8, and continuous.
Auto precharge, includes concurre.

Datasheet Details

Part number	MT48H8M32LF
Manufacturer	Micron Technology
File Size	2.48 MB
Description	Mobile Low-Power SDR SDRAM
Datasheet	MT48H8M32LF Datasheet
Additional preview pages of the MT48H8M32LF datasheet.

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Full PDF Text Transcription

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256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H16M16LF – 4 Meg x 16 x 4 banks MT48H8M32LF – 2 Meg x 32 x 4 banks Features • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive edge of system clock • Internal, pipelined operation; column address can be changed every clock cycle • Four internal banks for concurrent operation • Programmable burst lengths: 1, 2, 4, 8, and continuous • Auto precharge, includes concurrent auto precharge • Auto refresh and self refresh modes • LVTTL-compatible inputs and outputs • On-chip temperature sensor to control self refresh rate • Partial-array self refresh (PASR) • Deep power-down (DPD) • Selectable output drive strength (DS) • 64ms refresh period Options • VDD/VDDQ: 1.8V/1.

Published: Oct 11, 2014 |