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MT4C1M16E5

Manufacturer: Micron Technology

This datasheet includes multiple variants, all published together in a single manufacturer document.

MT4C1M16E5 datasheet preview

Datasheet Details

Part number MT4C1M16E5
Datasheet MT4C1M16E5 MT4LC1M16E5 Datasheet (PDF)
File Size 385.15 KB
Manufacturer Micron Technology
Description EDO DRAM
MT4C1M16E5 page 2 MT4C1M16E5 page 3

MT4C1M16E5 Overview

The 1 Meg x 16 is a randomly accessed, solid-state memory containing 16,777,216 bits organized in a x16 configuration. The 1 Meg x 16 has both BYTE WRITE and WORD WRITE access cycles via two CAS# pins (CASL# and CASH#). These function like a single CAS# found on other DRAMs in that either CASL# or CASH# will generate an internal CAS#.

MT4C1M16E5 Key Features

  • JEDEC- and industry-standard x16 timing, functions, pinouts, and packages
  • High-performance CMOS silicon-gate process
  • Single power supply (+3.3V ±0.3V or 5V ±10%)
  • All inputs, outputs and clocks are TTL-patible
  • Refresh modes: RAS#-ONLY, CAS#-BEFORE-RAS# (CBR), HIDDEN; optional self refresh (S)
  • BYTE WRITE access cycles
  • 1,024-cycle refresh (10 row, 10 column addresses)
  • Extended Data-Out (EDO) PAGE MODE access
  • 5V-tolerant inputs and I/Os on 3.3V devices
  • Voltages 1 3.3V 5V
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