Description
The Micron® SyncBurst™ SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process.
Micron’s 16Mb SyncBurst SRAMs integrate a 1 Meg x 18, 512K x 32, or 512K x 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counter.
Features
- Fast clock and OE# access times.
- Single +3.3V ±0.165Vor 2.5V ±0.125V power supply (VDD).
- Separate +3.3V or 2.5V isolated output buffer supply (VDDQ).
- SNOOZE MODE for reduced-power standby.
- Common data inputs and data outputs.
- Individual BYTE WRITE control and GLOBAL WRITE.
- Three chip enables for simple depth expansion and address pipelining.
- Clock-controlled and registered addresses, data I/Os and control signals.
MT58L1MV18D Datasheet
