Datasheet Details
| Part number | MT58L1MY18D |
|---|---|
| Manufacturer | Micron Technology |
| File Size | 526.57 KB |
| Description | (MT58xxxx) 16Mb SYNCBURST SRAM |
| Datasheet |
 MT58L1MY18D Datasheet
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General Description
The Micron® SyncBurst™ SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process.
Micron’s 16Mb SyncBurst SRAMs integrate a 1 Meg x 18, 512K x 32, or 512K x 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counter.
Key Features
- Fast clock and OE# access times.
- Single +3.3V ±0.165Vor 2.5V ±0.125V power supply (VDD).
- Separate +3.3V or 2.5V isolated output buffer supply (VDDQ).
- SNOOZE MODE for reduced-power standby.
- Common data inputs and data outputs.
- Individual BYTE WRITE control and GLOBAL WRITE.
- Three chip enables for simple depth expansion and address pipelining.
- Clock-controlled and registered addresses, data I/Os and control signals.