MT58V512V36D
Description
The Micron® SyncBurst™ SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process.
Key Features
- Fast clock and OE# access times
- Separate +3.3V or 2.5V isolated output buffer supply (VDDQ)
- SNOOZE MODE for reduced-power standby
- Individual BYTE WRITE control and GLOBAL WRITE
- Three chip enables for simple depth expansion and address pipelining
- Clock-controlled and registered addresses, data I/Os and control signals
- Internally self-timed WRITE cycle
- Burst control (interleaved or linear burst)
- Automatic power-down
- 100-pin TQFP package
