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MT8LD864A - DRAM MODULE

General Description

The Micron® MT8LD864A X, MT16LD1664A X and MT32LD3264A X are randomly accessed 64MB, 128MB and 256MB memories organized in a x64 configuration.

They are specially processed to operate from 3V to 3.6V for low-voltage memory systems.

Key Features

  • Eight-CAS# ECC pinout in a 168-pin, dual in-line memory module (DIMM).
  • 64MB (8 Meg x 64), 128MB (16 Meg x 64), and 256MB (32 Meg x 64).
  • Nonbuffered.
  • High-performance CMOS silicon-gate process.
  • Single +3.3V ±0.3V power supply.
  • All inputs, outputs and clocks are LVTTLcompatible.
  • 4,096-cycle CAS#-BEFORE-RAS# (CBR) refresh distributed across 64ms.
  • Extended Data-Out (EDO) PAGE MODE access cycle.
  • Serial presence-detect (.

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Other Datasheets by Micron Technology

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MT8LDT864 SMALL-OUTLINE DRAM MODULE
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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8, 16, 32 MEG x 64 NONBUFFERED DRAM DIMMs DRAM MODULE FEATURES • Eight-CAS# ECC pinout in a 168-pin, dual in-line memory module (DIMM) • 64MB (8 Meg x 64), 128MB (16 Meg x 64), and 256MB (32 Meg x 64) • Nonbuffered • High-performance CMOS silicon-gate process • Single +3.3V ±0.3V power supply • All inputs, outputs and clocks are LVTTLcompatible • 4,096-cycle CAS#-BEFORE-RAS# (CBR) refresh distributed across 64ms • Extended Data-Out (EDO) PAGE MODE access cycle • Serial presence-detect (SPD) MT8LD864A X, MT16LD1664A X, MT32LD3264A X For the latest data sheet, please refer to the Micron Web site: www.micronsemi.com/datasheets/datasheet.