Part JR28F032M29EWBA
Description Parallel NOR Flash Embedded Memory
Manufacturer Micron Technology
Size 1.04 MB
Micron Technology

JR28F032M29EWBA Overview

Key Features

  • Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65–3.6V (I/O buffers)
  • Asynchronous random or page read – Page size: 8 words or 16 bytes – Page access: 25ns – Random access: 60ns (BGA); 70ns (TSOP)
  • Buffer program: 256-word MAX program buffer
  • Program/erase controller – Embedded byte/word program algorithms
  • BLANK CHECK operation to verify an erased block
  • Unlock bypass, block erase, chip erase, and write to buffer capability – Fast buffered/batch programming – Fast block and chip erase
  • Software protection – Volatile protection – Nonvolatile protection – Password protection – Password access
  • Low-power consumption: Standby mode