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JR28F064M29EWLB

Manufacturer: Micron Technology

JR28F064M29EWLB datasheet by Micron Technology.

This datasheet includes multiple variants, all published together in a single manufacturer document.

JR28F064M29EWLB datasheet preview

JR28F064M29EWLB Datasheet Details

Part number	JR28F064M29EWLB
Datasheet	JR28F064M29EWLB JR28F032M29EWXX Datasheet (PDF)
File Size	1.04 MB
Manufacturer	Micron Technology
Description	Parallel NOR Flash Embedded Memory

JR28F064M29EWLB Overview

3V Embedded Parallel NOR Flash.

JR28F064M29EWLB Key Features

Supply voltage
VCC = 2.7-3.6V (program, erase, read)
VCCQ = 1.65-3.6V (I/O buffers)
Asynchronous random or page read
Page size: 8 words or 16 bytes
Page access: 25ns
Random access: 60ns (BGA); 70ns (TSOP)
Buffer program: 256-word MAX program buffer
Program time
0.56µs per byte (1.8 MB/s TYP when using 256word buffer size in buffer program without V PPH)

More Datasheets from Micron Technology

View all Micron Technology datasheets

Part Number	Description
JR28F064M29EWLA	Parallel NOR Flash Embedded Memory
JR28F064M29EWBA	Parallel NOR Flash Embedded Memory
JR28F064M29EWHA	Parallel NOR Flash Embedded Memory
JR28F064M29EWHB	Parallel NOR Flash Embedded Memory
JR28F064M29EWTA	Parallel NOR Flash Embedded Memory
JR28F064M29EWTB	Parallel NOR Flash Embedded Memory
JR28F064M29EWXX	Parallel NOR Flash Embedded Memory
JR28F032M29EWBA	Parallel NOR Flash Embedded Memory
JR28F032M29EWBB	Parallel NOR Flash Embedded Memory
JR28F032M29EWHA	Parallel NOR Flash Embedded Memory

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