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JS28F064M29EWBA

Manufacturer: Micron Technology

This datasheet includes multiple variants, all published together in a single manufacturer document.

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Datasheet Details

Part number	JS28F064M29EWBA
Datasheet	JS28F064M29EWBA JS28F064M29EWXX Datasheet (PDF)
File Size	1.04 MB
Manufacturer	Micron Technology
Description	Parallel NOR Flash Embedded Memory

JS28F064M29EWBA Overview

3V Embedded Parallel NOR Flash.

JS28F064M29EWBA Key Features

Supply voltage
VCC = 2.7-3.6V (program, erase, read)
VCCQ = 1.65-3.6V (I/O buffers)
Asynchronous random or page read
Page size: 8 words or 16 bytes
Page access: 25ns
Random access: 60ns (BGA); 70ns (TSOP)
Buffer program: 256-word MAX program buffer
Program time
0.56µs per byte (1.8 MB/s TYP when using 256word buffer size in buffer program without V PPH)

More Datasheets from Micron Technology

See all Micron Technology datasheets

Part Number	Description
JS28F064M29EWHA	Parallel NOR Flash Embedded Memory
JS28F064M29EWLA	Parallel NOR Flash Embedded Memory
JS28F064M29EWLB	Parallel NOR Flash Embedded Memory
JS28F064M29EWTA	Parallel NOR Flash Embedded Memory
JS28F064M29EWXX	Parallel NOR Flash Embedded Memory
JS28F00AM29EW	Parallel NOR Flash Embedded Memory
JS28F00AP30BFA	Micron Parallel NOR Flash Embedded Memory
JS28F00AP30BFx	Micron Parallel NOR Flash Embedded Memory
JS28F00AP30BTFA	Micron Parallel NOR Flash Embedded Memory
JS28F00AP30EFA	Micron Parallel NOR Flash Embedded Memory

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