M29DW256G
M29DW256G is Parallel NOR Flash Embedded Memory manufactured by Micron Technology.
Features
Micron Parallel NOR Flash Embedded Memory
M29DW256G X16 Multiple Bank, Page, Dual Boot 3V Supply Flash Memory
Features
- Supply voltage
- VCC = 2.7- 3.6V (program, erase, read)
- VCCQ = 1.65- 3.6V (I/O buffers)
- VPPH = 9V for fast program (optional)
- Asynchronous random/page read
- Page size: 8 words
- Page access: 25ns, 30ns
- Random access: 70ns, 80ns
- Fast program mands: 32-word
- Enhanced buffered program mands: 256-word
- Program time
- 16µs per byte/word TYP
- Chip program time: 10 s with VPPH and 16s with- out VPPH
- Memory organization
- Quadruple bank memory array: 32Mb + 96Mb + 96Mb + 32Mb with parameter blocks at top and bottom
- Dual operation: program/erase in one bank while reading in any other bank
- Program/erase controller
- Embedded word program algorithms
- Program/erase suspend and resume capability
- Read from any block during a PROGRAM SUSPEND operation
- Read...
