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M58BW32F - 32Mb 3.3V Supply Flash Memory

Download the M58BW32F datasheet PDF. This datasheet also covers the M58BW16F variant, as both devices belong to the same 32mb 3.3v supply flash memory family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • M58BW16F, M58BW32F 16Mb or 32Mb (x32, Boot Block, Burst) 3.3V Supply Flash Memory Features.
  • Supply voltage.
  • VDD = 2.7.
  • 3.6V (45ns) or VDD = 2.5.
  • 3.3V (55ns).
  • VDDQ = VDDQIN = 2.4V to VDD for I/O buffers.
  • High performance.
  • Access times: 45ns and 55ns.
  • Synchronous burst reads.
  • 75 MHz effective zero wait-state burst read.
  • Asynchronous page reads (4 double words).
  • M58BW32F memory organization:.
  • Ei.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M58BW16F-Micron.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
M58BW32F (M58BW16F / M58BW32F) Flash memories ST Microelectronics
M58BW016BB 16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories ST Microelectronics
M58BW016BT 16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories ST Microelectronics
M58BW016DB 16 Mbit 3V supply Flash memories Numonyx
M58BW016DB 16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories ST Microelectronics

Other Datasheets by Micron Technology

Part Number Description
M58BW16F 16Mb 3.3V Supply Flash Memory
M58WR032KB 32Mb Multi Bank Burst Flash memories
M58WR032KT 32Mb Multi Bank Burst Flash memories
M58WR064KB 64Mb Multi Bank Burst Flash memories
M58WR064KT 64Mb Multi Bank Burst Flash memories

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
M58BW16F, M58BW32F Features M58BW16F, M58BW32F 16Mb or 32Mb (x32, Boot Block, Burst) 3.3V Supply Flash Memory Features • Supply voltage – VDD = 2.7–3.6V (45ns) or VDD = 2.5–3.3V (55ns) – VDDQ = VDDQIN = 2.