MT29F128G08CKAAA Datasheet | Micron Technology

Features NAND Flash Memory MT29F32G08MAA ES, MT29F32G08CBAAA, MT29F64G08CFAAA, MT29F64G08CEAAA, MT29F128G08TAA ES, MT29F128G08CJAAA, MT29F128G08CKAAA Features - Open NAND Flash Interface (ONFI) 2.0-pliant - Multilevel cell (MLC) technology - Organization Page size: x8: 4314 bytes (4096 + 218 bytes) - Block size: 128 pages (512K + 27K bytes) - Plane size: 4096 blocks - Device size: 32Gb, 8192 blocks; 64Gb, 16,384 blocks; 128Gb, 32,768 blocks - READ performance - Random read: 50µs - Sequential read: 20ns - PROGRAM performance - Page program: 900µs (TYP) - Block erase: 3ms (TYP) - Endurance: 10,000 PROGRAM/ERASE cycles1 - First block (block address 00h) guaranteed to be valid with ECC when shipped from factory1 - Industry-standard basic NAND Flash mand set - Advanced mand set - PROGRAM PAGE CACHE MODE - PAGE READ CACHE MODE - Two-plane mands - Interleaved die operations - READ UNIQUE ID - Operation status byte provides a software method of detecting: - Operation pletion - Pass/fail condition - Write-protect status - Ready/busy# (R/B#) signal provides a hardware method of detecting PROGRAM and ERASE cycle pletion - WP# signal: entire-device hardware write protect - RESET required as first mand after power-up - INTERNAL DATA MOVE operations supported within the plane from which data is read Figure 1: 48-Pin TSOP Type 1 Options - Density2: 32Gb, 64Gb, 128Gb - Device width: x8 - Configuration: # of die # of CE# # of R/B#...