MT29F16G08QAAWC
Key Features
- READ performance – Random READ: 50µs – Sequential READ: 25ns
- WRITE performance – PROGRAM PAGE: 650µs (TYP) – BLOCK ERASE: 2ms (TYP)
- Endurance: 10,000 PROGRAM/ERASE cycles (with ECC and invalid block mapping)
- First block (block address 00h) guaranteed to be valid with ECC when shipped from factory
- Industry-standard basic NAND Flash mand set
- Ready/busy# (R/B#) signal provides a hardware method of detecting PROGRAM, READ, or ERASE cycle pletion
- WP# signal: Entire device hardware write protect
- Staggered power-up sequence: Issue RESET (FFh) mand
- Density1 – 8Gb (single-die stack) – 16Gb (dual-die stack) – 32Gb (quad-die stack)
- Device width: x8
