MT29F256G08CMCAB
Key Features
- NAND Flash Memory
- Open NAND Flash Interface (ONFI) 2.2-pliant1
- Multiple-level cell (MLC) technology
- Synchronous I/O performance – Up to synchronous timing mode 5 – Clock rate: 10ns (DDR) – Read/write throughput per pin: 200 MT/s
- Asynchronous I/O performance – Up to asynchronous timing mode 5 – tRC/tWC: 20ns (MIN)
- Array performance – Read page: 50µs (MAX) – Program page: 1300µs (TYP) – Erase block: 3ms (TYP)
- mand set: ONFI NAND Flash Protocol
- First block (block address 00h) is valid when shipped from factory. For minimum required ECC, see Error Management (page 109)
- RESET (FFh) required as first mand after poweron
- Operation status byte provides software method for detecting – Operation pletion – Pass/fail condition – Write-protect status
