• Part: MT29F32G08CBCBB
  • Description: NAND Flash Memory
  • Manufacturer: Micron Technology
  • Size: 3.22 MB
MT29F32G08CBCBB Datasheet (PDF) Download
Micron Technology
MT29F32G08CBCBB

Overview

  • Open NAND Flash Interface (ONFI) 2.1-compliant1
  • Multiple-level cell (MLC) technology
  • Organization - Page size x8: 4320 bytes (4096 + 224 bytes) - Block size: 256 pages (1024K + 56K bytes) - Plane size: 2 planes x 2048 blocks per plane - Device size: 32Gb: 4096 blocks; 64Gb: 8192 blocks; 128Gb: 16,384 blocks; 256Gb: 32,768 blocks
  • Synchronous I/O performance - Up to synchronous timing mode 4 - Clock rate: 12ns (DDR) - Read/write throughput per pin: 166 MT/s
  • Asynchronous I/O performance - Up to asynchronous timing mode 4 - tRC/tWC: 25ns (MIN)
  • Array performance - Read page: 50µs (MAX) - Program page: 900µs (TYP) - Erase block: 3ms (TYP)
  • Operating Voltage Range - VCC: 2.7-3.6V - VCCQ: 1.7-1.95V, 2.7-3.6V
  • Command set: ONFI NAND Flash Protocol
  • Advanced Command Set - Program cache - Read cache sequential - Read cache random - One-time programmable (OTP) mode - Multi-plane commands - Multi-LUN operations - Read unique ID - Copyback
  • First block (block address 00h) is valid when shipped from factory. For minimum required ECC, see Error Management (page 108).