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MT29F32G08TAAWC - NAND Flash Memory MLC

Download the MT29F32G08TAAWC datasheet PDF. This datasheet also covers the MT29F8G08MAAWC variant, as both devices belong to the same nand flash memory mlc family and are provided as variant models within a single manufacturer datasheet.

Description

8 Architecture

Features

  • NAND Flash Memory MLC MT29F8G08MAAWC, MT29F8G08MAAWP, MT29F16G08QAAWC,MT29F32G08TAAWC Features.
  • Organization.
  • Page size x8: 2,112 bytes (2,048 + 64 bytes) Block size: 128 pages (256K + 8K bytes).
  • Plane size: 2,048 blocks.
  • Device size: 8Gb: 4,096 blocks; 16Gb: 8,192 blocks; 32Gb: 16,384 blocks.
  • READ performance.
  • Random READ: 50µs.
  • Sequential READ: 25ns.
  • WRITE performance.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT29F8G08MAAWC_Micron.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Micron Confidential and Proprietary 8Gb, 16Gb, and 32Gb: x8 NAND Flash Memory Features NAND Flash Memory MLC MT29F8G08MAAWC, MT29F8G08MAAWP, MT29F16G08QAAWC,MT29F32G08TAAWC Features • Organization – Page size x8: 2,112 bytes (2,048 + 64 bytes) Block size: 128 pages (256K + 8K bytes) – Plane size: 2,048 blocks – Device size: 8Gb: 4,096 blocks; 16Gb: 8,192 blocks; 32Gb: 16,384 blocks • READ performance – Random READ: 50µs – Sequential READ: 25ns • WRITE performance – PROGRAM PAGE: 650µs (TYP) – BLOCK ERASE: 2ms (TYP) • Endurance: 10,000 PROGRAM/ERASE cycles (with ECC and invalid block mapping) • First block (block address 00h) guaranteed to be valid with ECC when shipped from factory • Industry-standard basic NAND Flash command set • New commands – PAGE READ CACHE MODE – TWO-PLANE/MULTIPL
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