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MT29F64G08CECCB - NAND Flash Memory

Download the MT29F64G08CECCB datasheet PDF. This datasheet also covers the MT29F32G08CBACA variant, as both devices belong to the same nand flash memory family and are provided as variant models within a single manufacturer datasheet.

General Description

only.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document.

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Low thermal resistance 2 VTS40100CT PIN 1 PIN 3 PIN 2 CASE 3 1 VF40100C PIN 1 PIN 3 PIN 2 2 3 1.
  • Meets MSL level 1, per J-STD-020C, LF max peak of 245 °C (for TO-263AB package).
  • Solder dip 260 °C, 40 seconds (for TO-220AB, ITO-220AB & TO-262AA package).
  • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT29F32G08CBACA-Micron.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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MT29F1G08ABADAH4 NAND Flash Memory Micron Technology
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Other Datasheets by Micron Technology

Part Number Description
MT29F64G08CECBB NAND Flash Memory
MT29F64G08CEAAA NAND Flash Memory
MT29F64G08CEACA NAND Flash Memory
MT29F64G08CABA NAND Flash Memory
MT29F64G08CBAAA NAND Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
New Product VTS40100CT, VF40100C, VB40100C & VI40100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.