• Part: MT29F64G08CECCB
  • Description: NAND Flash Memory
  • Manufacturer: Micron Technology
  • Size: 3.14 MB
Download MT29F64G08CECCB Datasheet PDF
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Datasheet Summary

New Product VTS40100CT, VF40100C, VB40100C & VI40100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.375 V at IF = 5 A TMBS ® TO-220AB ITO-220AB Features - Trench MOS Schottky technology - Low forward voltage drop, low power losses - High efficiency operation - Low thermal resistance 2 VTS40100CT PIN 1 PIN 3 PIN 2 CASE 3 1 VF40100C PIN 1 PIN 3 PIN 2 - Meets MSL level 1, per J-STD-020C, LF max peak of 245 °C (for TO-263AB package) - Solder dip 260 °C, 40 seconds (for TO-220AB, ITO-220AB & TO-262AA package) - ponent in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS TO-263AB K K TO-262AA 2 1 1...