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MT4LSDT864LH - 64MB SMALL-OUTLINE SDRAM MODULE

Download the MT4LSDT864LH datasheet PDF. This datasheet also covers the MT4LSDT464H variant, as both devices belong to the same 64mb small-outline sdram module family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • PC100 and PC133 compliant 144-pin, small-outline, dual in-line memory module (SODIMM).
  • Utilizes 125 MHz and 133 MHz SDRAM components.
  • Unbuffered.
  • 32MB (4Meg x 64), 64MB (8 Meg x 64), and 128MB (16 Meg x 64).
  • Single +3.3V power supply.
  • Fully synchronous; all signals registered on positive edge of system clock.
  • Internal pipelined operation; column address can be changed every clock cycle.
  • Internal SDRAM banks for hiding row a.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT4LSDT464H-Micron.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MT4LSDT464 SMALL-OUTLINE SDRAM MODULE Micron Technology
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MT4LC16M4G3 DRAM Micron Technology
MT4LC16M4H9 DRAM Micron Technology
MT4LC16M4T8 DRAM Micron Technology

Other Datasheets by Micron Technology

Part Number Description
MT4LSDT864A 64MB SDRAM Unbuffered DIMM
MT4LSDT864H 64MB SMALL-OUTLINE SDRAM MODULE
MT4LSDT1664A 128MB SDRAM Unbuffered DIMM
MT4LSDT1664H 128MB SMALL-OUTLINE SDRAM MODULE
MT4LSDT1664LH 128MB SMALL-OUTLINE SDRAM MODULE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMALL-OUTLINE SDRAM MODULE Features • PC100 and PC133 compliant 144-pin, small-outline, dual in-line memory module (SODIMM) • Utilizes 125 MHz and 133 MHz SDRAM components • Unbuffered • 32MB (4Meg x 64), 64MB (8 Meg x 64), and 128MB (16 Meg x 64) • Single +3.3V power supply • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal SDRAM banks for hiding row access/precharge • Programmable burst lengths: 1, 2, 4, 8, or full page • Auto Precharge and Auto Refresh Modes • Self Refresh Mode: Standard and Low Power • 32MB and 64MB: 64ms, 4,096-cycle refresh (15.625µs refresh interval); 128MB: 64ms, 8,192cycle refresh (7.