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MT5C512K8B2 - 512K x 8 SRAM

Description

The

Features

  • High speed: 12, 15, 20, 25 and 35ns.
  • High-performance, low-power, CMOS double-metal process.
  • Multiple center power and ground pins for improved noise immunity.
  • Single +5V ±10% power supply.
  • Easy memory expansion with CE and OE options.
  • All inputs and outputs are TTL-compatible.
  • Fast OE access time: 6, 8, 10, 12 and 15ns.

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ADVANCE SRAM FEATURES • High speed: 12, 15, 20, 25 and 35ns • High-performance, low-power, CMOS double-metal process • Multiple center power and ground pins for improved noise immunity • Single +5V ±10% power supply • Easy memory expansion with CE and OE options • All inputs and outputs are TTL-compatible • Fast OE access time: 6, 8, 10, 12 and 15ns OPTIONS • Timing 12ns access 15ns access 20ns access 25ns access 35ns access MARKING -12 -15 -20 -25 -35 • Packages Plastic SOJ (400 mil) Plastic TSOP (400 mil) DJ TG • 2V data retention • Lowpower • Temperature Commercial (O°C to +70°C) Industrial (-40°C to +85°C) Automotive (-40°C to +125°C) Extended (-55°C to +125°C) L P None IT AT XT • Part Number Example: MT5C512K8B2DJ-20 L NOTE: Not all combinations of operating temperature, spee
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