MT9HTF6472PZ Datasheet | Micron Technology

Features DDR2 SDRAM RDIMM - 512MB MT9HTF12872PZ - 1GB MT9HTF25672PZ - 2GB Features - 240-pin, registered dual in-line memory module - Fast data transfer rates: PC2-6400, PC2-5300, PC2-4200, or PC2-3200 - 512MB (64 Meg x 72), 1GB (128 Meg x 72), 2GB (256 Meg x 72) - Supports ECC error detection and correction - VDD = VDDQ = 1.8V - VDDSPD = 1.7- 3.6V - JEDEC-standard 1.8V I/O (SSTL_18-patible) - Differential data strobe (DQS, DQS#) option - 4n-bit prefetch architecture - Multiple internal device banks for concurrent operation - Programmable CAS# latency (CL) - Posted CAS# additive latency (AL) - WRITE latency = READ latency - 1 t CK - Programmable burst lengths (BL): 4 or 8 - Adjustable data-output drive strength - 64ms, 8192-cycle refresh - On-die termination (ODT) - Serial presence-detect (SPD) with EEPROM - Single rank - Gold edge contacts -...