NP8P128AE3T1760E
Key Features
- High-performance READ – 115ns initial READ access – 135ns initial READ access – 25ns, 8-word asynchronous-page READ
- Phase change memory (PCM) – Chalcogenide phase change storage element – Bit-alterable WRITE operation
- Voltage and power – VCC (core) voltage: 2.7–3.6V – VCCQ (I/O) voltage: 1.7–3.6V – Standby current: 80µA (TYP)
- Quality and reliability – More than 1,000,000 WRITE cycles – 90nm PCM technology
- Temperature – mercial: 0°C to +70°C (115ns initial READ access) – Industrial: –40°C to +85°C (135ns initial READ access)
- Density and packaging – 128Mb density – 56-lead TSOP package – 64-ball easy BGA package
