PF48F4000P0ZTQEJ Overview
256Mb and 512Mb (256Mb/256Mb), P30-65nm Features Micron Parallel NOR Flash Embedded Memory (P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex, PC48F4400P0VB0Ex, PF48F4000P0ZB/TQEx Features • Voltage and power – VCC (core) voltage: 1.7V to 2.0V – VCCQ (I/O) volta
PF48F4000P0ZTQEJ Key Features
- High performance
- 100ns initial access for Easy BGA
- 110ns initial access for TSOP
- 25ns 16-word asychronous page read mode
- 52 MHz (Easy BGA) with zero WAIT states and 17ns clock-to-data output synchronous burst read mode
- 4-, 8-, 16-, and continuous word options for burst mode
- Buffered enhanced factory programming (BEFP) at 2 MB/s (TYP) using a 512-word buffer
- 1.8V buffered programming at 1.14 MB/s (TYP) using a 512-word buffer
- Architecture
- MLC: highest density at lowest cost
