PF48F4400P0VBQEF Datasheet PDF (Parallel NOR Flash Embedded Memory)

PF48F4400P0VBQEF - Parallel NOR Flash Embedded Memory

This page provides the datasheet information for the PF48F4400P0VBQEF, a member of the PF48F4000P0ZBQEF Parallel NOR Flash Embedded Memory family.

Features

Micron Parallel NOR Flash Embedded Memory (P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex, PC48F4400P0VB0Ex, PF48F4000P0ZB/TQEx Features.
High performance.
100ns initial access for Easy BGA.
110ns initial access for TSOP.
25ns 16-word asychronous page read mode.
52 MHz (Easy BGA) with zero WAIT states and 17ns clock-to-data output synchronous burst read mode.
4-, 8-, 16-, and continuous wor.

Datasheet Details

Part number	PF48F4400P0VBQEF
Manufacturer	Micron
File Size	1.22 MB
Description	Parallel NOR Flash Embedded Memory
Datasheet	PF48F4400P0VBQEF Datasheet
Additional preview pages of the PF48F4400P0VBQEF datasheet.

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Full PDF Text Transcription

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256Mb and 512Mb (256Mb/256Mb), P30-65nm Features Micron Parallel NOR Flash Embedded Memory (P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex, PC48F4400P0VB0Ex, PF48F4000P0ZB/TQEx Features • High performance – 100ns initial access for Easy BGA – 110ns initial access for TSOP – 25ns 16-word asychronous page read mode – 52 MHz (Easy BGA) with zero WAIT states and 17ns clock-to-data output synchronous burst read mode – 4-, 8-, 16-, and continuous word options for burst mode – Buffered enhanced factory programming (BEFP) at 2 MB/s (TYP) using a 512-word buffer – 1.8V buffered programming at 1.

Published: Dec 18, 2017 |