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PZ28F064M29EWHA

Manufacturer: Micron Technology

PZ28F064M29EWHA datasheet by Micron Technology.

This datasheet includes multiple variants, all published together in a single manufacturer document.

PZ28F064M29EWHA datasheet preview

PZ28F064M29EWHA Datasheet Details

Part number	PZ28F064M29EWHA
Datasheet	PZ28F064M29EWHA PZ28F032M29EWXX Datasheet (PDF)
File Size	1.04 MB
Manufacturer	Micron Technology
Description	Parallel NOR Flash Embedded Memory

PZ28F064M29EWHA Overview

3V Embedded Parallel NOR Flash.

PZ28F064M29EWHA Key Features

Supply voltage
VCC = 2.7-3.6V (program, erase, read)
VCCQ = 1.65-3.6V (I/O buffers)
Asynchronous random or page read
Page size: 8 words or 16 bytes
Page access: 25ns
Random access: 60ns (BGA); 70ns (TSOP)
Buffer program: 256-word MAX program buffer
Program time
0.56µs per byte (1.8 MB/s TYP when using 256word buffer size in buffer program without V PPH)

More Datasheets from Micron Technology

View all Micron Technology datasheets

Part Number	Description
PZ28F064M29EWHX	Parallel NOR Flash Embedded Memory
PZ28F064M29EWBA	Parallel NOR Flash Embedded Memory
PZ28F064M29EWBB	Parallel NOR Flash Embedded Memory
PZ28F064M29EWBX	Parallel NOR Flash Embedded Memory
PZ28F064M29EWLA	Parallel NOR Flash Embedded Memory
PZ28F064M29EWLX	Parallel NOR Flash Embedded Memory
PZ28F064M29EWTA	Parallel NOR Flash Embedded Memory
PZ28F064M29EWTX	Parallel NOR Flash Embedded Memory
PZ28F064M29EWXX	Parallel NOR Flash Embedded Memory
PZ28F032M29EWBA	Parallel NOR Flash Embedded Memory

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