RC48F4400P0VB0EJ - Parallel NOR Flash Embedded Memory

Features

Micron Parallel NOR Flash Embedded Memory (P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex, PC48F4400P0VB0Ex, PF48F4000P0ZB/TQEx Features.
High performance.
100ns initial access for Easy BGA.
110ns initial access for TSOP.
25ns 16-word asychronous page read mode.
52 MHz (Easy BGA) with zero WAIT states and 17ns clock-to-data output synchronous burst read mode.
4-, 8-, 16-, and continuous wor.

Micron

Datasheet Details

Part number	RC48F4400P0VB0EJ
Manufacturer	Micron
File Size	1.22 MB
Description	Parallel NOR Flash Embedded Memory
Datasheet	RC48F4400P0VB0EJ Datasheet
Additional preview pages of the RC48F4400P0VB0EJ datasheet.

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RC48F4400P0TB0EJ - Parallel NOR Flash Embedded Memory

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256Mb and 512Mb (256Mb/256Mb), P30-65nm Features Micron Parallel NOR Flash Embedded Memory (P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex, PC48F4400P0VB0Ex, PF48F4000P0ZB/TQEx Features • High performance – 100ns initial access for Easy BGA – 110ns initial access for TSOP – 25ns 16-word asychronous page read mode – 52 MHz (Easy BGA) with zero WAIT states and 17ns clock-to-data output synchronous burst read mode – 4-, 8-, 16-, and continuous word options for burst mode – Buffered enhanced factory programming (BEFP) at 2 MB/s (TYP) using a 512-word buffer – 1.8V buffered programming at 1.

Published: Dec 18, 2017 |