4N23A Datasheet | Micropac Industries

Features : - - - - - - Collector is electrically isolated from the case. Overall current gain...1.5 typical (4N24A) Base lead provided for conventional transistor biasing Rugged package High gain, high voltage transistor +1k V electrical isolation Applications: - - - - - Eliminate ground loops Level shifting Line receiver Switching power supplies Motor control DESCRIPTION Gallium Aluminum Arsenide (Ga Al As) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed metal case. The 4N22A, 4N23A and 4N24A can be tested to customer specifications, as well as to MIL-PRF-19500 JAN, JANS, JANTX, and JANTXV quality levels. - ABSOLUTE MAXIMUM RATINGS Input to Output Voltage ±1k V Emitter-Collector Voltage 4V Collector-Emitter Voltage 35V Collector-Base Voltage 35V Reverse Input Voltage 2V Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1) 40m A Peak Forward Input Current (Value applies for tw < 1µs, PRR < 300 pps) 1A Continuous Collector Current...