JANTXV4N47A Datasheet | Micropac Industries

Features : - - - - - High Reliability Base lead provided for conventional transistor biasing Rugged package High gain, high voltage transistor +1k V electrical isolation Applications: - - - - - Eliminate ground loops Level shifting Line receiver Switching power supplies Motor control DESCRIPTION Gallium Aluminum Arsenide (Ga Al As) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed TO-5 metal can. The 4N47A, 4N48A and 4N49A’s can be tested to customer specifications, as well as to MIL-PRF19500 JAN, JANTX, JANTXV and JANS quality levels. - ABSOLUTE MAXIMUM RATINGS Input to Output Voltage 1k V Emitter-Collector Voltage 7V Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero) 40V Collector-Base Voltage 45V Reverse Input Voltage 2V Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1) 40m A Peak Forward Input Current (Value applies for tw < 1µs, PRR < 300 pps) 1A Continuous Collector Current 50m A Continuous Transistor Power Dissipation at (or...